Method for producing a light emitting device
US7709282B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 11, 2004 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Dec 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
Abstract
A production method for producing a light-emitting device 1 in which a light-emitting layer at least comprised of a n-type substrate bearing layer 3 and a p-type substrate bearing layer 4 is layered on a transparent crystal substrate 2 is provided with a step of forming a transfer layer 5 on at least a part of the transparent crystal substrate 2 or the light-emitting layer 3, 4, which transfer layer 5 is softened or set upon supplying an energy thereto; a step of pressing a mold 6 formed with a minute unevenness structure 61 against the transfer layer 5 to transfer the minute unevenness structure 61 to an outer surface of the transfer layer 5, and a step of forming a minute unevenness structure 21, 34 for preventing multiple reflection based on the minute unevenness structure 51 transferred to the transfer layer 5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.