Patent · US Expired

Method of manufacturing a MEMS device and MEMS device

US7709285B2 · kind B2 · utility

7Cited by

8References

12Claims

0Family size

Assignee

EPCOS AG · DE

Inventors

Jozef Thomas Martinus van Beek · Rosmalen, NL
Mathieu J. E. Ulenaers · Eindhoven, NL

Key dates

Filing date	Oct 26, 2004
Grant date	May 4, 2010
Priority date	—
Expiry date	Dec 28, 2024

Classification

Technology area (CPC H)Electricity
CPC primaryH01H2239/01
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A method for manufacturing a micro-electromechanical systems (MEMS) device, comprising providing a base layer (10) and a mechanical layer (12) on a substrate (14), providing a sacrificial layer (16) between the base layer (10) and the mechanical layer (12), providing an etch stop layer (18) between the sacrificial layer (16) and the substrate (14), and removing the sacrificial layer (16) by means of dry chemical etching, wherein the dry chemical etching is performed using a fluorine-containing plasma, and the etch stop layer (18) comprises a substantially non-conducting, fluorine chemistry inert material, such as HfO2, ZrO2, Al2O3 or TiO2.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.