Method of manufacturing semiconductor device
US7709295B2 · kind B2 · utility
6Cited by
3References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 30, 2007 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Oct 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a semiconductor device, a passivation film made of a polyimide resin film is formed on a front surface of a semiconductor wafer including a scribe line and an outer circumferential portion. Thereafter, only the passivation film which is formed on the scribe line of the semiconductor wafer and on the outer circumferential portion of the semiconductor wafer is selectively removed. A protective tape is then bonded onto the front surface of the semiconductor wafer, followed by grinding of a rear surface of the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.