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US7709306B2 · kind B2 · utility
1Cited by
1References
51Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2004 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Oct 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/464
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an electronic device including at least one electrically conductive and one semiconductive material deposited from solution, the method comprising: forming on the substrate a confinement structure consisting of a least a first zone and a second zone, depositing the electrically conductive material on the substrate, wherein the electrically conductive material is absent from both the first and second zone, and subsequently depositing the electrically semiconductive material from solution, wherein the semiconductive material is absent from the first zone, but not from the second zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.