Method for manufacturing SOI substrate and semiconductor device
US7709337B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2008 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Mar 21, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.