Integrated circuit with dielectric layer

US7709359B2 · kind B2 · utility

Assignee

• Qimonda AG · DE

Inventors

• Tim Boescke · Dresden, DE
• Johannes Heitmann · Dresden, DE
• Uwe Schroder · Dresden, DE

Key dates

• Filing date: Sep 5, 2007
• Grant date: May 4, 2010
• Expiry date: Sep 5, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/60

Abstract

A method of fabricating an integrated circuit with a dielectric layer on a substrate is disclosed. One embodiment provides forming the dielectric layer in an amorphous state on the substrate, the dielectric layer having a crystallization temperature; a doping the dielectric layer; a forming of a covering layer on the dielectric layer at a temperature being equal to or below the crystallization temperature; and a heating of the dielectric layer to a temperature being equal to or greater than the crystallization temperature.