Method for fabricating semiconductor device and semiconductor device
US7709376B2 · kind B2 · utility
3Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2008 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Jul 29, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes forming a dielectric film on a semiconductor substrate; forming an opening in the dielectric film; forming a refractory metal film in the opening; performing a nitriding process to the refractory metal film; removing a nitride of the refractory metal film formed on a side wall of the opening; and depositing tungsten (W) in the opening from which the nitride is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.