Ion implantation mask and method for manufacturing same, silicon carbide semiconductor device using ion implantation mask, and method for manufacturing same
US7709862B2 · kind B2 · utility
6Cited by
6References
8Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Aug 1, 2006 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Oct 26, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.