Optical semiconductor device having photosensitive diodes and process for fabricating such a device

US7709916B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Jens Prima · Gehrde, DE
• Francois Roy · Seyssinet-Pariset, FR

Key dates

• Filing date: Jan 13, 2006
• Grant date: May 4, 2010
• Expiry date: Mar 4, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/933

Abstract

An optical semiconductor device includes, in a zone (5), a structure of photosensitive diodes including a matrix (6) of lower electrodes (7), an intermediate layer (9) made of a photosensitive material formed on the matrix of lower electrodes and at least one upper electrode (10a) formed on the intermediate layer, in which an electrical connection (3a) includes at least one electrical contact pad (7a) and at least one electrical connection pad (16a) are produced beneath the intermediate layer, at least one electrical connection via (14) is produced through the intermediate layer and connects the upper electrode to the electrical contact pad and at least one well (15a) is formed outside the zone (5) and passes through at least the intermediate layer (9) in order to expose the electrical connection pad (16a). Also provided is a process for fabricating such a device.