Patent · US Active

Thin film piezoelectric resonator and method of manufacturing the same

US7709999B2 · kind B2 · utility

4Cited by
8References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 29, 2006
Grant dateMay 4, 2010
Priority date
Expiry dateDec 5, 2028

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/42
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

A thin film piezoelectric resonator includes a substrate having a cavity; a first electrode extending over the cavity; a piezoelectric film placed on the first electrode; and a second electrode placed on the piezoelectric film, the second electrode having a periphery partially overlapping on the cavity and tapered to have an inner angle of 30 degrees or smaller defined by a part of the periphery thereof and a bottom thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.