Thin film piezoelectric resonator and method of manufacturing the same
US7709999B2 · kind B2 · utility
4Cited by
8References
16Claims
0Family size
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Key dates
| Filing date | Mar 29, 2006 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Dec 5, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A thin film piezoelectric resonator includes a substrate having a cavity; a first electrode extending over the cavity; a piezoelectric film placed on the first electrode; and a second electrode placed on the piezoelectric film, the second electrode having a periphery partially overlapping on the cavity and tapered to have an inner angle of 30 degrees or smaller defined by a part of the periphery thereof and a bottom thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.