Electron beam apparatus
US7710010B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2008 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Jul 31, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2329/0489
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A three-dimensional structure forming a space in which a wiring-side portion of a device electrode is located is arranged on a rear plate. A surface potential of the three-dimensional structure is defined so that an electric field intensity of the space becomes weaker than an average electric field intensity expressed below,average electric field intensity=Va/d, where Va is application voltage of an anode electrode, and d is an interval between a rear plate and the face plate. The device electrode includes a high-temperature portion where temperature locally rises when current flows through the device electrode. The high-temperature portion is positioned in the space or at a distance of less than or equal to 20 μm from the space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.