Semiconductor device and electronic apparatus using the same
US7710166B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2006 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Feb 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/00384
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The transistor suffers the variation caused in threshold voltage or mobility due to gathering of the factors of the variation in gate insulator film resulting from a difference in manufacture process or substrate used and of the variation in channel-region crystal state. The present invention provides an electric circuit having an arrangement such that both electrodes of a capacitance element can hold a gate-to-source voltage of a particular transistor. The invention provides an electric circuit having a function capable of setting a potential difference at between the both electrodes of the capacitance element by the use of a constant-current source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.