Patent · US Active

Determining leakage in matrix-structured electronic devices

US7710365B2 · kind B2 · utility

0Cited by

10References

7Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Franky So · Tempe, US
Florian Pschenitzka · San Francisco, US
Egbert Hoefling · Regensburg, DE

Key dates

Filing date	Dec 26, 2006
Grant date	May 4, 2010
Priority date	—
Expiry date	Feb 28, 2029

Classification

Technology area (CPC G)Physics
CPC primaryG01R31/3008
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

One embodiment of this invention pertains to a high throughput screening technique to identify current leakage in matrix-structured electronic devices. Because elements that are likely to develop a short have relatively high leakage current at zero operation hours, by identifying elements with the relatively high leakage current, the electronic devices that are more likely to later develop a short can be differentiated. The screening technique includes performing the following actions: selecting one of multiple first lines; applying a first voltage to the selected first line; applying a second voltage to the one or more of the first lines that are not selected; floating the multiple second lines; and measuring the voltages on the second lines, either sequentially one line at a time or measuring all the lines at the same time.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.