Sense amplifiers having MOS transistors therein with different threshold voltages and/or that support different threshold voltage biasing
US7710807B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2008 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | May 2, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/4065
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sense amplifier includes a pair of sense bit lines and first and second MOS sense amplifiers. The first MOS sense amplifier has a first pair of MOS transistors of first conductivity type therein, which are electrically coupled across the pair of sense bit lines. This electrically coupling is provided so that each of the first pair of MOS transistors has a first source/drain terminal electrically connected to a corresponding one of the pair of sense bit lines and the second source/drain terminals of the first pair of MOS transistors are electrically connected together. The first pair of MOS transistors of first conductivity type is configured to have different threshold voltages or support different threshold voltage biasing. The second MOS sense amplifier has a first pair of MOS transistors of second conductivity type therein, which are electrically coupled across the pair of sense bit lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.