Semiconductor laser with side mode suppression
US7711016B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2007 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Feb 27, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4031
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Systems and methods for stripping an optical mode from a semiconductor laser. A waveguide layer with multiple layers is included in the semiconductor laser and is typically arranged beneath the active region. The waveguide layer is configured to match the phase of the second order mode. The waveguide layer does not substantially match the primary optical mode of the laser. By matching the phase of the second order mode, the confinement of the second order mode is reduced and the second order mode strongly couples with the waveguide layer. The optical confinement of the primary mode is not substantially reduced. The side-mode suppression ratio is thereby improved by stripping the second order mode from the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.