Monolithic semiconductor laser
US7711024B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 23, 2006 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Sep 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is disclosed a monolithic semiconductor laser which is provided with an AlGaAs based semiconductor laser element (10a) and an InGaAlP based semiconductor laser element (10b) formed on a semiconductor substrate (1). The AlGaAs based semiconductor laser element (10a) is composed of an infrared light emitting layer forming portion (9a), which has an n-type cladding layer (2a), an active layer (3a) and a p-type cladding layer (4a) formed so as to have a ridge portion, and a current constriction layer (5a) provided on sides of the ridge portion, while the InGaP based semiconductor laser element (10b) is composed of a red light emitting layer forming portion (9a), which has an n-type cladding layer (2b), an active layer (3b) and a p-type cladding layer (4b) formed so as to have a ridge portion, and a current constriction layer (5b) provided on sides of the ridge portion. The current constriction layers of the both elements are made of the same material having a larger band gap than that of the active layer (3b) of the red light emitting layer forming portion. Consequently, there can be obtained a monolithic semiconductor laser capable of high temperature and high output operation w…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.