Semiconductor optical modulator
US7711214B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2006 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Oct 28, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/102
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is provided a semiconductor optical modulator capable of performing a stable operation and having an excellent voltage-current characteristic to an electric field while exhibiting the characteristic of a semiconductor optical modulator with an n-i-n structure. The semiconductor optical modulator includes a waveguide structure that is formed by sequentially growing an n-type InP clad layer (11), a semiconductor core layer (13) having an electro-optic effect, a p-InAlAs layer (15), and an n-type InP clad layer (16). An electron affinity of the p-InAlAs layer (15) is smaller than an electron affinity of the n-type InP clad layer (16). In the waveguide structure having such a configuration, a non-dope InP clad layer (12) and a non-dope InP clad layer (14) may be respectively provided between the n-type InP clad layer (11) and the semiconductor core layer (13), and between the semiconductor core layer (13) and the p-InAlAs layer (15).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.