Copper oxide thin film low-friction material and film-forming method therefor
US7713635B2 · kind B2 · utility
2Cited by
0References
9Claims
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Key dates
| Filing date | Apr 23, 2004 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Nov 12, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/087
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A copper oxide thin film mainly containing CuO is formed by a plasma film-forming process on a substrate for film formation. The friction coefficient of the copper oxide thin film can be controlled remarkably low.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.