Double patterning method
US7713818B2 · kind B2 · utility
35Cited by
16References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 30, 2008 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Jun 30, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/84
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a device includes forming a first photoresist layer over an underlying layer, patterning the first photoresist layer to form a first photoresist pattern, rendering the first photoresist pattern insoluble to a solvent, forming a second photoresist layer over the first photoresist pattern, patterning the second photoresist layer to form a second photoresist pattern over the underlying layer, and etching the underlying layer using both the first and the second photoresist patterns as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.