Method for forming conductive layer and substrate having the same, and method for manufacturing semiconductor device
US7713836B2 · kind B2 · utility
7Cited by
9References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2007 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Oct 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/0531
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A separation layer is formed over a substrate having a depressed portion, using a silane coupling agent; a conductive layer and an insulating layer that covers the conductive layer are formed in the depressed portion over the separation layer; and a sticky member is attached to the insulating layer, then the conductive layer and the insulating layer are separated from the substrate. Alternatively, after these steps, a flexible substrate is attached to the conductive layer and the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.