Electronic components produced by a method of separating two layers of material from one another

US7713840B2 · kind B2 · utility

Assignee

• OSRAM GmbH · DE

Inventors

• Michael Kelly · Queen Creek, US
• Oliver Ambacher · Neufahrn, DE
• Martin Stutzmann · Erding, DE
• Martin Brandt · Schömberg, DE
• Roman Dimitrov · San Jose, US
• Robert Handschuh · Burgkirchen an der Alz, DE

Key dates

• Filing date: Mar 11, 2008
• Grant date: May 11, 2010
• Expiry date: Mar 11, 2028

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/977
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure. The semiconductor body is transferred from a growth substrate to a support material by: exposing an interface between the growth substrate and the semiconductor body or a region in the vicinity of said interface to electromagnetic radiation through one of the semiconductor body and the growth substrate; decomposing a material at or in proximity to said interface by absorption of the electromagnetic radiation in proximity to or at said interface so that the semiconductor body can be separated from the growth substrate; and connecting the semiconductor body to the support material.