Methods for forming field effect transistors and EPI-substrate
US7713852B2 · kind B2 · utility
2Cited by
2References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 12, 2007 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Feb 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor method includes thermally treating at least a portion of a substrate so as to generate a plurality of vacancies in a region at a depth substantially near to a surface of the substrate. The substrate is then quenched so as to substantially maintain the vacancies in the region substantially near to the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.