Method for fabricating dielectric on metal by baking dielectric precursor under reduced pressure atmosphere
US7713877B2 · kind B2 · utility
1Cited by
5References
12Claims
0Family size
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Key dates
| Filing date | Aug 24, 2006 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Jul 25, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C18/1283
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A dielectric film production process comprising a baking step in which a dielectric film is formed by heating a precursor layer formed on a metal layer, wherein the metal layer contains at least one type of metal selected from the group consisting of Cu, Ni, Al, stainless steel and austenitic nickel-chromium-based superalloy and during at least part of the baking step the precursor layer is heated in a reduced pressure atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.