Patent · US Active

Microwave plasma generator

US7714248B2 · kind B2 · utility

0Cited by
1References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 24, 2006
Grant dateMay 11, 2010
Priority date
Expiry dateFeb 10, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/32192
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

The present invention discloses a microwave plasma generator which includes a chamber, a conductive inorganic substance, a trace gas and a microwave source. The conductive inorganic substance and the trace gas are housed in the chamber with an inner pressure about 0.001˜10 torr. By irradiating the conductive inorganic substance and exciting the trace gas, clean and uniform plasma will be generated. The plasma generator of this invention is easily operated and can be applied to semiconductor manufacturing processes, for example, material modification, etching/cleaning, roughing and ion doping/hybrid.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.