Organic thin film transistor and method of manufacturing the same
US7714324B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2006 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Sep 26, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/84
Abstract
An organic TFT that has an improved contact between source and drain electrodes and an organic semiconductor layer, a method of manufacturing the same, and an organic light emitting display device having the organic TFT are disclosed. The organic TFT includes a substrate, a gate electrode disposed on the substrate, a gate insulating film covering the gate electrode, a source electrode and a drain electrode disposed on the gate insulating film, a peel-off preventive layer disposed on the gate insulating film to contact at least a portion of end surfaces of the source and drain electrodes, and an organic semiconductor layer that contacts the source and drain electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.