Nanowire light emitting device and method of manufacturing the same
US7714351B2 · kind B2 · utility
7Cited by
0References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2006 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Sep 1, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/95
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.