Carbon nanotube field effect transistor

US7714386B2 · kind B2 · utility

Assignee

• NORTHROP GRUMMAN SYSTEMS CORPORATION · US

Inventors

• Aaron A. Pesetski · Gambrills, US
• Hong Zhang · Gambrills, US
• John D. Adam · Murrysville, US
• John X. Przybysz · Penn Hills, US
• Jim Murduck · Ellicott City, US
• Norman P. Goldstein · Murrysville, US
• James E. Baumgardner · Odenton, US

Key dates

• Filing date: Jun 9, 2006
• Grant date: May 11, 2010
• Expiry date: Mar 11, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K10/484
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A carbon nanotube field effect transistor includes a substrate, a source electrode, a drain electrode and a carbon nanotube. The carbon nanotube forms a channel between the source electrode and the drain electrode. The carbon nanotube field effect transistor also includes a gate dielectric and a gate electrode. The gate electrode is separated from the carbon nanotube by the gate dielectric, and an input radio frequency voltage is applied to the gate electrode.