Magnetic memory element and magnetic memory apparatus
US7714399B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2007 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Aug 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory element includes a laminated construction of an electrode, a first pinned layer, a first intermediate layer, a first memory layer, a second intermediate layer, a second memory layer, a third intermediate layer, a second pinned layer and electrode. The magnetization direction of the first memory layer takes a first and a second directions and that of the second memory layer takes a third and a fourth directions corresponding to a value and polarity of a current between the electrodes. In response to the current, the second intermediate layer has an electric resistance higher than the first intermediate layer and than the third intermediate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.