Image sensor using back-illuminated photodiode and method of manufacturing the same
US7714403B2 · kind B2 · utility
23Cited by
5References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 14, 2007 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Jun 14, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
An image sensor using a back-illuminated photodiode and a manufacturing method thereof are provided. According to the present invention, since a surface of the back-illuminated photodiode can be stably treated, the back-illuminated photodiode can be formed to have a low dark current, a constant sensitivity of blue light for all photodiodes, and high sensitivity. In addition, it is possible to manufacture an image sensor with high density by employing a three dimensional structure in which a photodiode and a logic circuit are separately formed on different substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.