Nitride semiconductor device and method of manufacturing the same
US7714439B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Aug 24, 2007 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Aug 24, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A nitride semiconductor device according to the present invention includes a P-type contact layer and a P-type electrode provided on the P-type contact layer. The P-type electrode includes a AuGa film provided on the P-type contact layer, a Au film provided on the AuGa film, a Pt film 4 provided on the Au film, and a Au film provided on the Pt film. The ratio of the thickness of the AuGa film to the total thickness of the AuGa film and the Au film is not less than 12% but not more than 46%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.