Method for controlling vertical type MOSFET in bridge circuit
US7714624B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2008 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Apr 24, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method for controlling a vertical type MOSFET in a bridge circuit is provided to reduce diode power loss and improve a reverse recovery characteristic. The method includes controlling a forward voltage of a built-in diode of the vertical type MOSFET to be a first forward voltage by setting a gate voltage of the vertical MOSFET to a first gate voltage, so that the vertical type MOSFET is switched into a first off mode; and controlling the forward voltage of the built-in diode of the vertical type MOSFET to be a second forward voltage by setting the gate voltage of the vertical MOSFET to a second gate voltage, so that the vertical type MOSFET is switched into a second off mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.