Solid-state image device having multiple PN junctions in a depth direction, each of which provides and output signal
US7714915B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2005 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Apr 21, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N2209/045
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A solid-state image device is provided which has a semiconductor substrate, pixels A each containing a photoelectric conversion portion in which at least two PN junction parts are provide in a depth direction of the semiconductor substrate, pixels B each containing a photoelectric conversion portion in which at least one PN junction part is provided, first color filters provided above the pixels A, second color filters provided above the pixels B; and a detection mechanism for detecting a first color signal and a second color signal from the two PN junction parts of each of the pixels A and a third color signal from the PN junction part of each of the pixels B. According to the above solid-state image device, light can be more efficiently used than a color filter separation method, and superior color reproducibility to that of a three-well structure can be realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.