Semiconductor optical devices, systems and methods of manufacturing the same
US7715458B2 · kind B2 · utility
2Cited by
2References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2007 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Oct 28, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor optical device includes a silicon substrate and a Group III-V semiconductor gain layer. The Group III-V semiconductor gain layer is formed on the silicon substrate. The silicon substrate or the Group III-V semiconductor gain layer has a dispersion Bragg grating formed therein. In a method of manufacturing a semiconductor optical device, a Group III-V semiconductor gain layer is formed on a silicon substrate. A dispersion Bragg grating is formed on the silicon substrate or the Group III-V semiconductor gain layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.