Patent · US Active

Method for producing submicron structures

US7718349B2 · kind B2 · utility

0Cited by

1References

18Claims

0Family size

Assignee

Christian-Albrechts-Universitaet zu Kiel · DE

Inventors

Rainer Adelung · Kiel, DE
Stefan Rehders · Geisingen, DE

Key dates

Filing date	Oct 17, 2005
Grant date	May 18, 2010
Priority date	—
Expiry date	Feb 4, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02639
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a method for producing submicron structures using a shadow mask, whereby a material charge and/or energy charge occurs through the openings of the shadow mask. The method comprises the following steps: a film which is used as a shadow mask and which is made of a masking material is applied to the substrate, tears are produced in the film, the tears extending until the substrate, edge areas of the film arranged on the tears are detached thereby exposing the substrate and the material or the energy is applied to the substrate by the tears, also above the exposed edge area of the shadow mask film.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.