Method of manufacturing non-volatile semiconductor memory
US7718483B2 · kind B2 · utility
2Cited by
10References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2006 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Aug 13, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for manufacturing a non-volatile semiconductor device according to this invention, steps are provided for forming a plurality of first semiconductor portions over a substrate; selectively growing a plurality of second semiconductor portions in contacting with said plurality of first semiconductor portions respectively; partially removing said plurality of second semiconductor portions to prepare a plurality of floating gates with substantially flat surfaces; forming an insulating layer over said plurality of floating gates; and forming a control gate over said insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.