Nitride semiconductor device
US7718992B2 · kind B2 · utility
3Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2006 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Jul 21, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A nitride semiconductor device is provided. In the device, first and second conductivity type nitride layers are formed. An active layer is formed between the first and second conductivity type nitride layers. The active layer includes at least one quantum barrier layer and at least one quantum well layer. Also, a current spreading layer is interposed between the first conductivity type nitride layer and the active layer. The current spreading layer has an In content greater than the quantum well layer of the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.