Electronic device and its manufacturing method
US7719032B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2003 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | May 22, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/949
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube (10) having an outer semiconductive carbon nanotube layer (1) and an inner metallic carbon nanotube layer (2) that is partially covered by the outer semiconductive carbon nanotube layer (1). A metal source electrode (3) and a metal drain electrode (5) are brought into contact with both ends of the semiconductive carbon nanotube layer (1) while a metal gate electrode (4) is brought into contact with the metallic carbon nanotube layer (2). The space between the semiconductive carbon nanotube layer (1) and the metallic carbon nanotube layer (2) is used as a gate insulating layer. Two layers including the outer semiconductive carbon nanotube layer (1) and the inner metallic carbon nanotube layer (2) are selected from carbon nanotube layers of a multi-walled carbon nanotube. These layers are processed into a form suitable for use as the multi-walled carbon nanotube (10).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.