Capacitor for a semiconductor device and method of forming the same
US7719045B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2008 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Nov 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
Abstract
In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and outer surfaces of the lower electrode as the dielectric layer. A first sub-electrode is formed on a surface of the dielectric layer along the profile of the lower electrode and a second sub-electrode is continuously formed on the first sub-electrode corresponding to the top surface of the lower electrode, so an opening portion of the lower electrode is covered with the second sub-electrode. The first and second sub-electrodes include first and second metal nitride layers in which first and second stresses are applied, respectively. Directions of the first and second stresses are opposite to each other. Accordingly, cracking is minimized in the upper electrode with the high dielectric constant, thereby reducing current leakage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.