Cascode power switch topologies
US7719055B1 · kind B1 · utility
102Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 2007 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | May 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A normally-off cascode power switch circuit is disclosed fabricated in wide bandgap semiconductor material such as silicon carbide or gallium nitride and which is capable of conducting current in the forward and reverse direction under the influence of a positive gate bias. The switch includes cascoded junction field effect transistors (JFETs) that enable increased gain, and hence blocking voltage, while minimizing specific on-resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.