Semiconductor device, electronic apparatus comprising the same, and method for fabrication of substrate for semiconductor device used therein
US7719119B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2006 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | May 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/09509
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has upper electrodes and external terminals which are protruding above the both surfaces of a substrate for semiconductor device and connected to each other by penetrating electrodes, a first insulating film covering at least a metal pattern except for the portions of the first insulating film corresponding to the upper electrodes, a second insulating film covering at least another metal pattern except for the portions of the second insulating film corresponding to the external terminals, and a semiconductor element connected to the upper electrodes and placed on the substrate for semiconductor device. The solder-connected surface of the external terminal is positioned to have a height larger than that of a surface of the second insulating film. The semiconductor element is placed on the first insulating film and covered, together with the upper electrodes, with a mold resin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.