High performance chirped electrode design for large area optoelectronic devices
US7719746B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2008 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Jan 31, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/12
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An electro-optic device with a doped semiconductor base and a plurality of pixels on the semiconductor base, each pixel including: a multiple quantum well formed on the semiconductor base, an oppositely doped semiconductor layer on the multiple quantum well, and a top electrode on the semiconductor layer, the top electrode shaped to produce an approximately uniform lateral resistance in the pixel. An embodiment is a large area modulator for modulating retro-reflector systems, which typically use large area surface-normal modulators with large lateral current flow. Uniform resistance to each part of the modulator decreases location dependence of frequency response. A chirped grid electrode balances semiconductor sheet resistance and metal line resistance components of the series resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.