Patent · US Expired

Magnetoresistive element, particularly memory element or logic element, and method for writing information to such an element

US7719883B2 · kind B2 · utility

10Cited by

7References

24Claims

0Family size

Assignee

Universitat Duisburh-Essen · DE

Inventors

Andreas Hochstrat · Voerde, DE
Xi Chen · 流花街道, CN
Pavel Borisov · Duisburg, DE
Wolfgang Kleemann · Oberursel, DE

Key dates

Filing date	Mar 30, 2006
Grant date	May 18, 2010
Priority date	—
Expiry date	Apr 15, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/85
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A magnetoresistive element, in particular a memory element or a logic element and a method for writing information to such an element are disclosed. The element comprises a first contact of ferromagnetic material and a corresponding layer of magnetoelectric or ferromagnetic material, whereby the first contact is magnetically polarized, depending on an antiferromagnetic boundary surface polarization of the first layer. Said magnetic polarization forms binary information.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.