Organometallic compounds and methods of forming thin films including the use of the same
US7722926B2 · kind B2 · utility
3Cited by
1References
19Claims
0Family size
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Key dates
| Filing date | Jul 27, 2006 |
| Grant date | May 25, 2010 |
| Priority date | — |
| Expiry date | Jun 26, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides organometallic compounds and methods of forming thin films including using the same. The organometallic compounds include a metal and a ligand linked to the metal. The ligand can be represented by the following formula (1):wherein R1 and R2 are each independently hydrogen or an alkyl group. The thin films may be applied to semiconductor structures such as a gate insulation layer of a gate structure and a dielectric layer of a capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.