Method of forming an at least penta-sided-channel type of FinFET transistor
US7723193B2 · kind B2 · utility
11Cited by
11References
16Claims
0Family size
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Key dates
| Filing date | Apr 30, 2008 |
| Grant date | May 25, 2010 |
| Priority date | — |
| Expiry date | Jul 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
Abstract
An at least penta-sided-channel type of FinFET transistor may include: a base; a semiconductor body formed on the base, the body being arranged in a long dimension to have source/drain regions sandwiching a channel region, at least the channel, in cross-section transverse to the long dimension, having at least five planar surfaces above the base; a gate insulator on the channel region of the body; and a gate electrode formed on the gate insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.