Integrated semiconductor cascode circuit for high-frequency applications
US7723198B2 · kind B2 · utility
1Cited by
5References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 14, 2007 |
| Grant date | May 25, 2010 |
| Priority date | — |
| Expiry date | Sep 10, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/821
Abstract
An integrated semiconductor cascode circuit is provided that comprises an emitter layer, a first base area, a second base area, an intermediate area and a collector area. The first base area is arranged between the emitter layer and the intermediate area, and the second base area is arranged between the intermediate area and the collector area. A dielectric layer that is provided with a central opening is arranged between the first base area and the second base area. The invention also relates to a method for the production of said semiconductor cascode circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.