Method for selective CMP of polysilicon
US7723234B2 · kind B2 · utility
3Cited by
9References
16Claims
0Family size
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Key dates
| Filing date | Nov 22, 2006 |
| Grant date | May 25, 2010 |
| Priority date | — |
| Expiry date | Nov 22, 2026 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0126
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method of removing polysilicon in preference to silicon dioxide and/or silicon nitride by chemical mechanical polishing. The method removes polysilicon from a surface at a high removal rate while maintaining a high selectivity of polysilicon to silicon dioxide and/or a polysilicon to silicon nitride. The method is particularly suitable for use in the fabrication of MEMS devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.