Semiconductor device and fabrication method of the same
US7723751B2 · kind B2 · utility
5Cited by
6References
2Claims
0Family size
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Key dates
| Filing date | Mar 30, 2006 |
| Grant date | May 25, 2010 |
| Priority date | — |
| Expiry date | Jan 11, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A semiconductor device includes a substrate, a SiC drift layer formed above the substrate, a GaN-based semiconductor layer that is formed on the SiC drift layer and includes a channel layer, a source electrode and a gate electrode formed on the GaN-based semiconductor layer, current blocking regions formed in portions of the SiC drift layer and located below the source and gate electrodes, and a drain electrode formed on a surface that opposes the GaN-based semiconductor layer across the SiC layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.