Tiered gate structure devices
US7723761B1 · kind B1 · utility
2Cited by
9References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2008 |
| Grant date | May 25, 2010 |
| Priority date | — |
| Expiry date | Sep 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28593
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a tiered gate structure is provided having a substrate including a source, a drain and a gate thereon. The gate includes an elongated gate foot having a first deposition gate material extending from the substrate, the elongated gate foot having a top portion distal from the substrate. The gate head has a second deposition gate material and includes an elongated portion extending downward from the gate head to connect to the top portion of the elongated gate foot.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.