Semiconductor device and method of fabricating the same, and nor gate circuit using the semiconductor device
US7723801B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 14, 2007 |
| Grant date | May 25, 2010 |
| Priority date | — |
| Expiry date | Jul 20, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a semiconductor substrate having source/drain regions, a gate electrode formed on and/or over the semiconductor substrate, spacers formed against sidewalls of the gate electrode, an interlayer insulating layer formed over the semiconductor substrate and the gate electrode and having a plurality of contact holes formed therein, and contact plugs formed within the contact holes. The contact plugs can include a first contact plug and a second contact plug electrically connected to the gate electrode, and a third contact plug and a fourth contact plug electrically connected to the source/drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.