Wafer bonded composite structure for thermally matching a readout circuit (ROIC) and an infrared detector chip both during and after hybridization
US7723815B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2004 |
| Grant date | May 25, 2010 |
| Priority date | — |
| Expiry date | Jul 29, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/953
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer bonded composite structure is provided for matching a coefficient of thermal expansion of a first semiconductor chip to a coefficient of thermal expansion of a second semiconductor chip in order to provide a thermally matched hybridized semiconductor chip assembly. The wafer bonded composite structure includes a first semiconductor chip having a top and a bottom surface. The first semiconductor chip has a coefficient of thermal expansion which is less than the coefficient of thermal expansion of the second semiconductor chip. Preferably, the first semiconductor chip is an readout integrated circuit (ROIC) and the second semiconductor chip is an infrared detector chip. Further, the wafer bonded composite structure also includes a substrate wafer bonded to a bottom surface of the first semiconductor chip to form the wafer bonded composite structure itself. The wafer bonded substrate is preferably transparent to infrared radiation, so that the first semiconductor chip or ROIC of the resulting wafer bonded composite structure may be aligned with the second semiconductor chip or infrared detector chip before hybridization has taken place. Moreover, the composite structure has a …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.